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nand

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Taiwan MOE computer dictionary (moecomp)

NAND
非与的 NAND

The Free On-line Dictionary of Computing (foldoc)

Not AND. The {Boolean} function which is true unless
both its arguments are true, the {logical complement} of
{AND}:

A NAND B = NOT (A AND B) = (NOT A) OR (NOT B)

Its {truth table} is:

A | B | A NAND B
--------------
F | F | T
F | T | T
T | F | T
T | T | F

NAND, like {NOR}, forms a complete set of {Boolean} functions
on its own since it can be used to make NOT, AND, OR and any
other Boolean function:

NOT A = A NAND A

A AND B = NOT (A NAND B)

A OR B = (NOT A) NAND (NOT B)

(1995-01-24)

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英文字典中文字典相关资料:

What is Flash? NAND vs NOR - Enterprise Storage Forum
The most common types of NAND are SLC, MLC, and TLC, which contain between one and three bits in each cell 3D NAND, which stacks cells vertically, is also gaining ground in high-performance, high density environments SLC: Single-Level Cell NAND stores one bit of information per cell The architecture delivers the highest endurance
What Is 3D NAND? Types, Pros Cons - Enterprise Storage Forum
3D NAND Pros and Cons Pros: Higher capacity in a smaller space compared to 2D NAND 3D NAND SSDs can pack in over 1 TB in a 2 5” form factor, and development continues Samsung for example makes a 30 TB SSD and is developing much higher capacities Lower cost per gigabyte 64 layers and above yields meaningful cost reductions over 2D NAND
为什么闪存被叫做NAND闪存（还有NOR闪存）？它跟与非门NAND（或非门NOR）有何关联？ - 知乎
NAND Flash擦写次数，一百万次，因为尺寸比NOR小八倍，因此在给定时间内删除次数要少一些。 7、位反转？ flash器件都会有的，发生在NAND Flash比较多，一个位会发生反转，可能认为一个位并不起什么作用，但是如果发生在关键文件上，就可能会导致系统停机。
SLC vs MLC vs TLC NAND Flash - Enterprise Storage Forum
NAND vs 3D NAND One of the biggest innovations to hit the flash storage market is 3D NAND or Vertical NAND (V-NAND) As the term implies, it uses a stacked architecture to arrange the memory cells within an SSD, instead of the planar or flat arrangement in past implementations
固态硬盘颗粒：SLC MLC TLC有什么区别？ - 知乎
其中，nand闪存又分为slc\mlc\tlc和qlc。 SLC :也就是Single-Level Cell，其中的每个Cell单元都储存一个数据，优点在于传输速度最快、功率小号更低、所以存储单元的寿命也更长，往往能达到10万次以上的擦写寿命，但成本也非常高，一般只出现在高端的企业级别SSD上
3D NAND制作过程是怎样的呢？ - 知乎
氮化硅（Nitride）：3D NAND使用电荷陷阱存储电子。电子被存储在氮化硅中，氮化硅是包裹在多晶硅沟道周围，代替了2D NAND中的浮动栅。这种电荷陷阱层使NAND具有非易失性的数据存储能力。我们再进一步解剖3D-NAND的结构，如图：
3D Nand基本原理-你想知道的全在这里（上） - 知乎
今天的展示的主角就是ROM家族中NOR flash 和 NAND flash，至于RAM，可以日后单独讨论，ROM的发展历程就是上面思维导图中ROM部分。发展到现在，NOR flash和 NAND flash都是在FET的基础上，增加一个浮柵上，通过将电子注入到浮栅上，实现编程。其基本构造如下：
How Long Does an SSD Last? | Calculate Your SSD’s Lifespan
SLC NAND flash can endure around 50,000 to 1,00,000 write cycles MLC NAND flash can sustain up to 3,000 write cycles eMLC or enterprise MLC version supports about 10,000 write cycles TLC NAND Flash has low endurance and can take about 300 to 1,000 write cycles Learn more about the difference between SSD and HDD speeds
【深入浅出SSD】NAND闪存技术与固态硬盘 - 知乎
深入浅出ssd系列：长期介绍ssd、pssd的科普知识与专业知识。敬请关注@存储印象。近年来，nand闪存及其相应的消费级应用市场和工业级应用市场总体是增长趋势，尤其是固态硬盘在消费级领域已经取代了机械硬盘的龙头地位，在笔记本电脑、台式机、工作站和服务器广泛应用。
Understanding Multilayer SSDs: SLC, MLC, TLC, QLC, and PLC
Multi-level SSDs can store two bits per NAND cell, and they’re slower than SLCs because two bits take longer to read and write MLC SSDs can produce four voltage charges—00, 01, 10, and 11—on a floating gate transistor (FGT) while using the same size voltage windows as SLC chips, but as a result, must run a time-consuming algorithm when

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