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  • A dopant is implanted into a p-type silicon wafer | Chegg. com
    Dopant: Phosphorus Oxide mask thickness: xm = 0 2 × 10-4 (cm) Dose: Q = 1 × 1014 (cm-2) Energy: A dopant i s implanted into a p - type silicon wafer containing a n oxide mask and then annealed according t o the parameters given
  • Solved (4 points) Which dopant will make silicon n-type? a)P - Chegg
    Question: (4 points) Which dopant will make silicon n-type? a)P (group-V element) b) B (group-III element) c) Ge (group-IV element) d) C (group-IV element) (optional, 4 bonus points) For a given semiconductor, as the donor doping concentration increases the extrinsic exhaustion regime and the intrinsic carrier concentration a) expands c) varies unpredictably b)
  • Solved We consider an n-doped amorphous silicon layer - Chegg
    Relative dopant concentration is given as the ratio of dopant atom density over silicon atomic density The doping efficiency is the average number of charge carriers provided by one dopant atom at room temperature This material has a dopant atom density of 5E19 cm3, and an electron mobility of 0 5 cm2 Vs
  • Solved Which of the following is true ? Select one: O a. - Chegg
    Boron is often used as an N-type dopant in Silicon b Phosphorus is often used as an N-type dopant in Silicon O c All of these O d Arsenic is often used as a P-type dopant in Silicon O e Carbon is often used as a P-type dopant in Silicon In a semiconductor doped with donor atoms, the number of holes is much higher than the number of electrons
  • Theoretical Data • Mass of chiral dopant = 0. 32 g - Chegg
    Question: Theoretical Data • Mass of chiral dopant = 0 32 g • Melting point of chiral dopant = 87-89 °C • Calculate the % yield of chiral dopant • Melting point of EBBA = 40 °C • Clearing point of EBBA = 80 °C • Discuss the results (yield MP)
  • Solved You are trying to build an n-type impurity | Chegg. com
    Question: You are trying to build an n-type impurity semiconductor and know the properties of the silicon as well as the dopant To make the semiconductor, you will use a dopant with Group of answer choices a conduction band just above the Fermi energy of silicon a valence band just below the Fermi energy of silicon a Fermi energy just above
  • Solved Problem 08. 006 - The behavior of the charge carriers - Chegg
    Question: Problem 08 006 - The behavior of the charge carriers and ionized dopant atoms in the vicinity of a semiconductor pn junctionIdentify the true statements about the behavior of charge carriers and ionized dopant atoms in the vicinity of a semiconductor pn junction that causes the potential (energy) barrier, which tends to prevent the charge carriers from
  • Solved What type of atom is needed as a dopant in a p-type - Chegg
    The term p-type semiconductor means that we use phosphorus as a dopant The term p-type semiconductor means that we use phosphorus as a dopant The term p - type semiconductor refers to the electron "holes" which can be viewed as positive areas in the sea of electrons The term p - type semiconductor refers to the electron "holes" which can be
  • Solved Crystalline silicon contains 5 times 10^22 | Chegg. com
    Question: Crystalline silicon contains 5 times 10^22 atoms cm^3 When a wafer is doped the dopant atom replaces a silicon atom in the lattice
  • Solved Consider an n-type silicon for which the dopant - Chegg
    Consider an n-type silicon for which the dopant concentration No = 101 cm? Find the electron and hole concentrations at T = 300 K O Solution The concentration of the majority electrons is 7,- Ny = 10cm The concentration of the minority holes is P In Example 3 1 we found that at T= 300 K, n; = 1 5 x 10"%cm°





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